惊爆价!50万RMB!高速大面积共聚焦推曼成像体系

显现全部
dow.png

奥门威尼斯131.cc

惊爆价!50万RMB!高速大面积共聚焦推曼成像体系

特惠价50万人民币,一套完好的激光推曼扫描成像体系,同时可晋级扩大为瞬态荧光,光电流成像!

所属种别: »

所属品牌:

技术服务职员:贺工(Kevin)

电话:180 1976 2603

邮箱:chinan-he@auniontech.com

奥门威尼斯131.cc

惊爆价!50万RMB!高速大面积共聚焦成像体系


高速大面积共聚焦推曼成像体系,高速Mapping!
XperRam Compact激光推曼成像体系
超高性价比激光推曼成像
特惠价50万人民币,一套完好的激光推曼扫描成像体系,同时可用于荧光,光电流成像
高分辨率!
精彩的重复性!
运用全息透射,光透过率下!
可扩大/ 定制!
200µm x 200µm 图象快速扫描 & 2D Mapping!


                                                                                                                                                                           
韩国NANOBASE公司专业消费下性价比共聚焦推曼成像体系,为科学和产业范畴供应下性价比解决方案。新用户能够从购置根蒂根基款的XperRam Compact型拉曼光谱仪最先,以后能够经由过程差别的选项对推曼光谱仪停止晋级,以知足用户的差别需求。本产物具有超高性价,现在特惠价50万人民币,包含一套完好的激光推曼扫描成像体系,同时可用于荧光,光电流成像

共焦拉曼成像体系,共聚焦推曼成像体系,共焦拉曼光谱成像体系,共焦拉曼成像光谱仪体系,推曼光谱仪,成像光谱仪,激光推曼成像体系, 显微推曼成像体系

韩国NANOBASE公司专业消费共聚焦激光扫描推曼成像体系,为科学和产业范畴供应下性价比解决方案。


产物具有以下特性:
u  奇特的激光扫描手艺,具有优秀的扫描分辨率和重复性
    激光扫描分辨率< 0.02="" um="" &="">< 0.1="">
u  体相全息光栅光谱仪
    光透过率>90%,比反射式光栅下30%,旌旗灯号传输效力更高
u  具有Raman/PL/光电流等多种丈量形式
u  构造松散,模块化设想
u  扫描速度快,扫描局限大
200µm x 200µm范围内高速成像 & 2D Mapping (x 40 objective)


产物参数:

XperRam Compact

Xpl□□□


空间分辨率

400nm

400nm

最低波数

750px-1

2500px-1

光谱分辨率

37.5px-1

15px-1

光谱局限

750px-1到150000px-1

2500px-1到87500px-1

CCD

ICX674,1392X1452 pixels

TE制冷科学级CCD

1024x256   TE制冷科学级相机

激光器

532nm,可选配785

532nm,可选配785nm

 

Mapping

推曼,荧光,光电流

推曼成像需求分外选购

物镜

10X,40X,100X

10X,50X,100X

光栅

透射式光栅,效力比反射式下30%

反射式光栅

上表是XperRam Compact取某着名公司推曼光谱仪参数对照



运用实例:
u 光电流成像,大(重)样品测试
扫描成像,载物台无需挪动,故而能够安排很重的样品在载物台上,下图是丈量带制冷器的碳纳米管的光电流成像,一般推曼成像体系没法完成此项测试



u 推曼成像(二硫化钼)


图(a)样品台上安排的带制冷器的碳纳米管的显微图象

 

图(b)碳纳米管的光电流mapping图样,
设置为激光扫描地区180um x180µm,步2µm
可恣意设置激光扫描局限和扫描步进,激光扫描局限在40倍物镜下最大可达200µm x 200µm,激光扫描步进可低至0.1µm


                     
图(c)二硫化钼样品的显微图象
图(d)二硫化钼的强度mapping成像,设置为激光扫描地区50um x50µm,激光扫描步进 0.3µm
图(e)二硫化钼的强度mapping成像,设置为激光扫描地区30um x30µm,激光扫描步进 0.1µm
图(f)二硫化钼的频次mapping成像,设置为激光扫描地区30um x30µm,激光扫描步进 0.1µm



图(g)单层取多层二硫化钼薄膜推曼成像取拉曼峰频移

 
u 荧光PL成像:
 


运用Nanobase XperRam系列推曼成像光谱仪宣布的局部文献:

(1)   A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2.pdf- Advanced Materials

(2)   SemiconductorInsulator Semiconductor Diode Consisting of Monolayer MoS2, h‑BN, and GaN Heterostructure.pdfACS Nano 

择要:We  propose a semiconductorinsulatorsemiconductor (SIS) heterojunction  diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride  (h-BN), and epitaxial p-GaN that can be applied to high-performance  nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN,  grown by chemical vapor deposition, were vertically stacked by a  wet-transfer method on a p-GaN layer. The final structure was verified  by confocal photoluminescence and Raman spectroscopy. Currentvoltage  (IV) measurements were conducted to compare the device performance with  that of a more classical pn structure. In both structures (the pn and  SIS heterojunction diode), clear current-rectifying characteristics were  observed. In particular, a current and threshold voltage were obtained  for the SIS structure that was higher compared to that of the pn  structure. This indicated that tunneling is the predominant carrier  transport mechanism. In addition, the photoresponse of the SIS structure  induced by the illumination of visible light was observed by  photocurrent measurements.

关键词:monolayer MoS2 . h-BN . GaN . semiconductorinsulatorsemiconductor diode . carrier tunneling

 

(3)   Raman Vibrations, Domain Structures, and Photovoltaic Effects in A-Site La-Modified BiFeO3 Multiferroic Ceramics.pdfJACS

择要:Micro-Raman  spectroscopy, X-ray diffraction, high-resolution transmission electron  microscopy (TEM), oxygen vacancies, synchrotron X-ray absorption  spectroscopy, magnetizations, optical band gaps, and photovoltaic (PV)  effects have been studied in (Bi1 – xLax)FeO3 (BFO100xL) ceramics for x =  0.0,0.05, 0.10, and 0.15. XRD, Raman spectra, and TEM confirm a  rhombohedral R3c symmetry with the tilted FeO6 oxygen octahedra in all  compounds. The low-frequency Raman vibrations become broader and shift  toward higher frequency as La3+ increases. Fe K-edge synchrotron X-ray  absorptions reveal that Fe3+ valence and Fe–O–Fe bond angle are not  modified by the La3+ substitution. All compounds exhibit a linear  antiferromagnetic feature. Optical transmission reveals band gaps in the  range of 2.22–2.24 eV. The heterostructures of indium tin oxide (ITO)  film/(Bi1 – xLax)FeO3 ceramics/Au film show a p–n junction-like I–V  characteristic behavior. The maximal PV power conversion efficiency can  reach 0.19% in ITO/BFO15L/Au under illumination of k = 405 nm. A  junction-like theoretical model can reasonably describe open-circuit  voltage and short-circuit current as a function of illumination  Intensity

澳门威尼斯线上手机版4531

(4)  Enhanced photovoltaic effects in A-site samarium doped BiFeO3 ceramics: The roles of domain structure and electronic state .pdfJECS

择要:This work reports enhanced photovoltaic (PV) responses of (Bi1 − xSmx)FeO3 (x = 0.0, 0.05, 0.10) ceramics (BFO100xSm) with ITO film under near-ultraviolet irradiation ([1]  = 405 nm). The ceramics were characterized by micro-Raman scattering,  high-resolution transmission electron microscopy, and synchrotron X-ray  absorption spectroscopy (XAS). A rhombohedral R3c symmetry with tilted  FeO6 octahedra has been

confirmed.  The Fe K-edge absorption spectra reveal a slight shift toward higher  energy as A-site Sm3+ substitution increases. The oxygen K-edge XAS  reveals an enhancement of hybridization between the O 2p and unoccupied  Fe 3d states due to Sm doping. The optical band gaps are in the range of  2.15–2.24 eV. The maximal PV power-conversion and external quantum  efficiencies respectively reach 0.37% and 4.1% in the ITO/BFO5Sm/Au  heterostructure. The PV responses can be described quantitatively by a  p-n-junctionlike model. The domain structures and hybridization between  the O 2p and Fe 3d states play important roles for the PV responses.

 

(5)Raman spectra and structural stability in B-site manganese doped (Bi0.5Na0.5)0.925Ba0.075TiO3 relaxor ferroelectric ceramics.pdf– JECS

择要:Soft  X-ray absorption (XAS), transmission electron spectroscopy (TEM), Raman  spectroscopy, and synchrotron XRD have been studied in B-site 0–2 mol%  manganese (Mn) doped (Bi0.5Na0.5)0.925Ba0.075TiO3 (BN7.5BT) relaxor  ferroelectric ceramics. High-resolution synchrotron XRD and TEM reveal  two phase coexistence of rhombohedral R3c and tetragonal P4bm structures  in 0 and 0.2%, and an orthorhombic structure in 1 and 2% Mn-doped  BN7.5BT at room temperature. Raman spectra of 0% Mn reveal structural  transition from two phase coexistence to tetragonal phase near 190 ◦C with a softening anomaly, while 0.2–2% Mn-doped BN7.5BT show softening behavior near 290 ◦C  upon heating. Raman spectra and synchrotron XRD indicate that Mn doping  can enhance structural thermal stability in BN7.5BT ceramics.© 2015  Elsevier Ltd. All rights reserved.

关键词:Relaxor ferroelectric ceramics; Raman spectroscopy; Synchrotron XRD; Phase transition

 

(6)Raman vibrations and photovoltaic conversion in rare earth doped (Bi0.93RE0.07)FeO3 (RE¼Dy, Gd, Eu, Sm) ceramics.pdf–CERAMICS INTERNATIONAL

择要:High-resolution  Raman spectra, X-ray diffraction, oxygen vacancies, synchrotron X-ray  absorption spectroscopy, magnetization, optical bandgap, and  photovoltaic (PV) conversion have been studied in BiFeO3 (BFO) and  (Bi0.93RE0.07)FeO3 (RE¼Dy, Gd, Eu and Sm) multiferroicceramics  (7%Dy–BFO, 7%Gd–BFO, 7%Eu–BFO, and 7%Sm–BFO). 7%Dy–BFO exhibits a weak  ferromagnetic behavior instead of the linearantiferromagnetic responses  found in the other compounds. Optical transmissions reveal band gaps of  2.20–2.21 eV, which are slightly smallerthan 2.24 eV in pure BFO. The  current vs. voltage (I–V) characteristic curves of indium tin oxide  (ITO)/(Bi0.93RE0.07)FeO3 ceramics/Auheterostructures suggest a  p–n-junction-like behavior. The maximal PV power-conversion efficiencies  under illumination of λ¼405 nm in ITO/7%Dy–BFO/Au, ITO/7%Gd–BFO/Au,  ITO/7%Eu–BFO/Au, and ITO/7%Sm–BFO/Au respectively reach 0.22%, 0.35%,  0.27%, and 0.24%,which are much larger than 0.017% in ITO/BFO/Au. The PV  open-circuit voltage and short-circuit current can be reasonably  described by ajunction model as a function of illumination intensity.

关键词:Rare-earth doped BiFeO3 ceramics; Raman vibration; Structure; Optical band gap; Photovoltaic conversion



应用领域:
质料学,功用质料,纳米质料,二维质料(石墨烯,二硫化钼等),铁电陶瓷等
生物医学,细胞成像,疾病检测,皮肤剖析等
半导体,太阳能电池和OLED等





数据单下载

展现全部 dow.png

文献下载

展现全部 dow.png

讯问表格

* 号为必挖内容
  • *
  • *
  • *
  • *
  • 考证码

产物标签:共焦拉曼成像体系,共聚焦推曼成像体系,共焦拉曼光谱成像体系,共焦拉曼成像光谱仪体系,推曼光谱仪,成像光谱仪,激光推曼成像体系, 显微推曼成像体系, 显微推曼光谱仪

数据单下载

* 号为必挖内容
请在下载前填写上面表单
Please fill in the form in before you download
  • *
  • *
  • *
  • *
  • 考证码

预定试用

* 号为必挖内容
请在下载前填写上面表单
Please fill in the form in before you download
  • *
  • *
  • *
  • *
  • 考证码

6446.com